Vishay has launched the new Gen 4.5 650 V E series power MOSFET, providing high efficiency and high power density for communication, industrial and computing applications.

Compared with the previous generation of devices, the on-resistance of Vishay Siliconix N-channel SiHK050N65E has decreased by 48.2%, while the important factor of superiority (FOM) of 650V MOSFETs in the product of resistance and gate charge (for power conversion applications) has decreased by 65.4%.

The SiHK050N65E is based on Vishay's latest high-efficiency E series super-junction technology and can achieve a typical low on-resistance of 0.048 Ω at 10 V, making it suitable for high-power applications exceeding 6 kW.

Meanwhile, the breakdown voltage of the 650 V device reaches an additional 50 V, enabling it to operate stably within an input voltage range of 200 VAC to 277 VAC and complying with the Open Rack V3(ORV3) standard of the Open Computing Project.

In addition, the ultra-low gate charge of the MOSFET is only 78 nC, providing an excellent FOM value of 3.74 Ω*nC. This is crucial for reducing conduction and switching losses, thereby further saving energy and enhancing efficiency. This enables the device to meet the specific titanium efficiency requirements in the server power supply or achieve a peak efficiency of 96%.

To optimize switching performance in hard-switching topologies such as PFC circuits and dual-switching feedforward designs, the recently released MOSFETs feature relatively low effective output capacitance values, with Co(er) at 167 pF and Co(tr) at 1119 pF. The device achieved an industry-low FOM of 8.0 Ω*pF at the resistance multiplied by Co(er).

The SiHK050N65E is available in a PowerPAK®10 x 12 package and is equipped with a Kelvin connection to reduce gate noise while enhancing dv/dt immunity.

The MOSFET complies with the RoHS standard and is halogen-free. It is specially designed to withstand overvoltage transients in avalanche mode, and a 100% UIS test ensures its limit value.